MTB55N06Z datasheet, PDF - EEWORLD Datasheet

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MTB55N06Z: DescriptionPower Field-Effect Transistor, 55A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size146KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MTB55N06Z Overview

Power Field-Effect Transistor, 55A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

MTB55N06Z Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Other features	AVALANCHE RATED, ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)	454 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	55 A
Maximum drain current (ID)	55 A
Maximum drain-source on-resistance	0.016 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	238 pF
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	136 W
Maximum power dissipation(Abs)	136 W
Maximum pulsed drain current (IDM)	165 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	484 ns
Maximum opening time (tons)	368 ns
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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by MTB55N06Z/D

Advance Information

TMOS E-FET.

™

High Energy Power FET

D2PAK for Surface Mount

N–Channel Enhancement–Mode Silicon Gate

This advanced high voltage TMOS E–FET is designed to

withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain–to–source diode

with fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, PWM motor controls and

other inductive loads, the avalanche energy capability is specified

to eliminate the guesswork in designs where inductive loads are

switched and offer additional safety margin against unexpected

voltage transients.

•

Avalanche Energy Capability Specified at Elevated

Temperature

•

Source–to–Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

•

Low Stored Gate Charge for Efficient Switching

•

Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor–Absorbs High Energy in the

Avalanche Mode

•

ESD Protected. Designed to Typically Withstand 400 V

Machine Model and 4000 V Human Body Model.

MTB55N06Z

TMOS POWER FET

55 AMPERES

60 VOLTS

RDS(on) = 18 mΩ

™

CASE 418B–02, Style 2

D2PAK

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Rating

Drain–to–Source Voltage

Drain–to–Gate Voltage (RGS = 1.0 MΩ)

Gate–to–Source Voltage — Continuous

Gate–to–Source Voltage

— Non–Repetitive (tp

≤

10 ms)

Drain Current — Continuous @ TC = 25°C

Drain Current

— Continuous @ TC = 100°C

Drain Current

— Single Pulse (tp

≤

µs)

Total Power Dissipation @ TC = 25°C

Derate above 25°C

Total Power Dissipation @ TA = 25°C (1)

Operating and Storage Temperature Range

Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VDS = 60 Vdc, VGS = 10 Vdc, Peak IL = 55 Apk, L = 0.3 mH, RG = 25

Ω)

Thermal Resistance — Junction to Case

Thermal Resistance

— Junction to Ambient

Thermal Resistance

— Junction to Ambient (1)

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

(1) When surface mounted to an FR4 board using the minimum recommended pad size.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Symbol

VDSS

VDGR

VGS

VGSM

IDM

Value

35.5

165

113

0.91

2.5

– 55 to 150

454

1.1

62.5

260

Unit

Vdc

Vpk

Adc

Apk

Watts

W/°C

°C

°C/W

TJ, Tstg

EAS

θJC

θJA

°C

E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

REV 1

Motorola TMOS

Motorola, Inc. 1997

Power MOSFET Transistor Device Data

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