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LDTD123ELT3G

Description
Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size384KB,6 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LDTD123ELT3G Overview

Small Signal Bipolar Transistor, 0.5A I(C), 1-Element, NPN, Silicon,

LDTD123ELT3G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Minimum DC current gain (hFE)39
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
Digital transistors
Features
1)Built-in bias resistors enable the
configuration of an inverter circuit
without connecting external input
resistors (see equivalent circuit).
2)The bias resistors consist of thin-
film resistors with complete isola-
tion to allow negative biasing of the
input. They also have the advan-
tage of almost completely eliminat-
ing parasitic effects.
3)Only the on/off conditions need to
be set for operation, making device
design easy.
compliance with
RoHS requirements.
LDTD123ELT1G
SOT–23
4)We declare that the material of product
Structure
NPN digital transistor
(Built-in resistor type)
Driver Marking
LDTD123ELT1G = F22
Equivalent circuit
3
1
2
Ordering Information
Device
LDTD123ELT1G
LDTD123ELT3G
Marking
F22
F22
Shipping
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