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MSS30,454-H40

Description
Microwave Mixer Diode,
CategoryDiscrete semiconductor    diode   
File Size185KB,4 Pages
ManufacturerAeroflex
Websitehttp://www.aeroflex.com/
Download Datasheet Parametric View All

MSS30,454-H40 Overview

Microwave Mixer Diode,

MSS30,454-H40 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1
MSS30,000 Series
Low Barrier Silicon
Schottky Diodes
Description
The Aeroflex / Metelics MSS30,000 Series of Schottky diodes
are fabricated on N-Type epitaxial substrates using proprietary
processes that yield the highest FCOs in the industry. Optimum
mixer performance is obtained with LO power of -3 dBm to +3
dBm per diode.
Features
V
F
, R
D
and C
J
matching options
Chip, beam lead or packaged devices
Hi-Rel screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
Parameters
Reverse Voltage
Forward Current
Operation Temperature
Storage Temperature
Power Dissipation
Soldering Temperature (Packaged)
Beam Lead Pull Strength
Rated V
BR
50 mA
-65 ºC to +1 ºC
50
-65 ºC to +1 ºC
50
100 mW per junction at T
A
= 25 ºC, derate
linearly to zero at T
A
= +1 ºC
50
+ 260 ºC for 5 sec.
4 grams minimum
Rating
Chip
Electrical Specifications,
T
A
= 25 ºC
V
F
V
BR
MIN
C
J
TYP / MAX
R
S
TYP
R
D
MAX
F
CO
TYP
Model
MSS30,046-C1
5
MSS30,050-C1
5
Test
Conditions
Configuration
TYP
Outline
V
V
pF
GHz
Single Junction
Single Junction
0.29
0.27
I
F
= 1
mA
2
2
I
R
=
10
μA
0.10 / 0.1
2
0.1 / 0.18
5
V
R
= 0 V
F = 1 MHz
10
6
18
1
5
160
1
75
C1
5
C1
5
I
F
= 5 mA
Revision Date: 05/20/05
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