Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPF930 MPF960 MPF990
V DS , DRAIN–SOURCE VOLTAGE (VOLTS)
10
5.0
C, CAPACITANCE (pF)
VGS = 10 V
2.0
1.0
0.5
0.2
0.1
–55
200
180
160
140
120
100
80
60
40
20
–35
–15
85 105
+5.0 25
45 65
TJ, JUNCTION TEMPERATURE (°C)
125
145
0
0
5.0
10
20
30
40
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
50
Crss
Ciss
Coss
VGS = 0 V
Figure 3. On Voltage versus Temperature
Figure 4. Capacitance Variation
2.4
ID(on), DRAIN CURRENT (AMPS)
ID(on), DRAIN CURRENT (AMPS)
2.1
1.8
1.5
1.2
0.9
0.6
0.3
0
0
1.0
2.0 3.0 4.0 5.0
6.0 7.0 8.0
VGS, GATE – SOURCE VOLTAGE (VOLTS)
9.0
10
VDS = 10 V
2.8
VGS = 10 V
2.4
9.0 V
2.0
1.6
7.0 V
1.2
6.0 V
0.8
5.0 V
0.4
0
0
5.0
10
20
30
40
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
4.0 V
50
8.0 V
Figure 5. Transfer Characteristic
Figure 6. Output Characteristic
2.8
ID(on), DRAIN CURRENT (AMPS)
2.4
2.0
1.6
VGS = 10 V
9.0 V
8.0 V
7.0 V
1.2
6.0 V
0.8
5.0 V
0.4
0.2
0
0.5
1.0
2.0
3.0
4.0
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
4.0 V
3.0 V
5.0
Figure 7. Saturation Characteristic
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MPF930 MPF960 MPF990
PACKAGE DIMENSIONS
A
R
P
F
L
B
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
X X
G
H
V
1 2 3
D
J
SECTION X–X
N C
N
CASE 029–05
(TO–226AE)
ISSUE AD
STYLE 22:
PIN 1. SOURCE
2. GATE
3. DRAIN
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