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BUZ50A.MODR1

Description
7.5A, 1000V, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric View All

BUZ50A.MODR1 Overview

7.5A, 1000V, N-CHANNEL, Si, POWER, MOSFET

BUZ50A.MODR1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionUNCASED CHIP, R-XUUC-N3
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)7.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-XUUC-N3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER COPPER
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
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