BUZ50A-220SM datasheet, PDF - EEWORLD Datasheet

BUZ50A-220SM: Description7.5A, 1000V, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size63KB，1 Pages; ManufacturerSEMELAB; Environmental Compliance

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BUZ50A-220SM Overview

7.5A, 1000V, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	UNCASED CHIP, R-XUUC-N3
Reach Compliance Code	compliant
Configuration	SINGLE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (ID)	7.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XUUC-N3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
Transistor component materials	SILICON
Base Number Matches	1

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