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UPA828TF-T1

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size202KB,7 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

UPA828TF-T1 Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN,

UPA828TF-T1 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.8 pF
Collector-emitter maximum voltage3 V
ConfigurationSEPARATE, 2 ELEMENTS
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)11000 MHz
Base Number Matches1

UPA828TF-T1 Related Products

UPA828TF-T1
Description RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN,
Reach Compliance Code unknown
Other features LOW NOISE
Maximum collector current (IC) 0.03 A
Collector-based maximum capacity 0.8 pF
Collector-emitter maximum voltage 3 V
Configuration SEPARATE, 2 ELEMENTS
highest frequency band ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G6
Number of components 2
Number of terminals 6
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type NPN
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications AMPLIFIER
Transistor component materials SILICON
Nominal transition frequency (fT) 11000 MHz
Base Number Matches 1
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