ZHCS500 datasheet, PDF - EEWORLD Datasheet

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ZHCS500: DescriptionRectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor diode; File Size102KB，3 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZHCS500 Overview

Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, SOT-23, 3 PIN

ZHCS500 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.05 V
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak forward current	3 A
Number of components	1
Number of terminals	3
Maximum operating temperature	125 °C
Maximum output current	0.5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.33 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	40 V
Maximum reverse recovery time	0.01 µs
surface mount	YES
technology	SCHOTTKY
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Base Number Matches	1

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SOT23 SILICON HIGH CURRENT

SCHOTTKY BARRIER DIODE “SuperBAT”

ISSUE 1- September 1997

FEATURES:

•

Low V

•

High Current Capability

APPLICATIONS:

•

DC - DC converters

•

Mobile telecomms

•

PCMCIA

PARTMARK DETAIL: ZS5

ZHCS500

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Continuous Reverse Voltage

Forward Current (Continuous)

Forward Voltage @ I

= 500mA

Average Peak Forward Current; D.C. = 50%

Non Repetitive Forward Current t≤100µs

t≤10ms

Power Dissipation at T

amb

= 25° C

Storage Temperature Range

Junction Temperature

SYMBOL

FAV

FSM

tot

stg

VALUE

500

550

1000

6.75

330

-55 to + 150

125

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25° C unless otherwise stated).

PARAMETER

Reverse Breakdown

Voltage

Forward Voltage

SYMBOL

(BR)R

MIN.

TYP.

270

300

370

465

550

640

810

440

300

350

460

550

670

780

1050

MAX.

UNIT

µA

CONDITIONS.

= 200µA

50mA*

100mA*

250mA*

500mA*

750mA*

1000mA*

1500mA*

500mA, T

amb

= 100° C*

Reverse Current

Diode Capacitance

Reverse Recovery

Time

= 30V

f= 1MHz,V

= 25V

switched from

= 500mA to I

= 500mA

Measured at I

= 50mA

*Measured under pulsed conditions. Pulse width= 300µs; duty cycle

≤2%

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