Philips Semiconductors
Product specification
High-speed switching diode
FEATURES
•
Small ceramic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 500 mA.
handbook, 4 columns
BAS216
DESCRIPTION
The BAS216 is a high-speed
switching diode fabricated in planar
technology, and encapsulated in the
small rectangular ceramic SMD
SOD110 package.
APPLICATIONS
•
High-speed switching in e.g.
surface mounted circuits.
cathode mark
k
k
a
a
bottom view
Marking code:
A6.
side view
top view
MAM139
Fig.1 Simplified outline (SOD110) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
V
R
I
F
I
FRM
I
FSM
PARAMETER
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
see Fig.2; note 1
−
−
−
−
−65
−
4
1
0.5
400
+150
150
A
A
A
mW
°C
°C
note 1
CONDITIONS
−
−
−
−
MIN.
MAX.
85
75
250
500
V
V
mA
mA
UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
High-speed switching diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
−
−
−
−
−
−
30
1
30
50
1.5
4
−
−
−
−
715
855
1
1.25
CONDITIONS
MIN.
BAS216
MAX.
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
fr
forward recovery voltage
−
1.75
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
200
315
UNIT
K/W
K/W
1999 Apr 22
3
Philips Semiconductors
Product specification
High-speed switching diode
GRAPHICAL DATA
BAS216
MSA570
500
handbook, halfpage
300
IF
MBG382
P tot
(mW)
(mA)
(1)
(2)
(3)
200
250
100
0
0
100
Tamb ( C)
o
0
200
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible total power dissipation
as a function of ambient temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 Apr 22
4
Philips Semiconductors
Product specification
High-speed switching diode
BAS216
10
5
IR
(nA)
10
4
MSA563
handbook, halfpage
0.6
MBH285
Cd
(pF)
V R = 75 V
0.5
75 V
10
3
0.4
10
2
25 V
0.2
10
0
100
Tj
(
o
C)
200
0
0
4
8
12 V (V) 16
R
Dotted line: maximum values.
Solid line: typical values.
f = 1 MHz; T
j
= 25
°C.
Fig.5
Reverse current as a function of
junction temperature.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 22
5
PCB Design
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