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BAS70L

Description
Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 70V; IAV Max (A): 0.07A; VFM Max (V): 1V; @ IF (A): 0.015A; IR Max (uA): 10uA; @VR (V): 70V; TRR Max (ns): 5ns; Pin: F2; Package: DFN1006-2
CategoryDiscrete semiconductor    diode   
File Size188KB,3 Pages
ManufacturerGalaxy Microelectronics
Download Datasheet Parametric View All

BAS70L Overview

Small Signal Schottky Diode; Configuration: Single; VRRM Max (V): 70V; IAV Max (A): 0.07A; VFM Max (V): 1V; @ IF (A): 0.015A; IR Max (uA): 10uA; @VR (V): 70V; TRR Max (ns): 5ns; Pin: F2; Package: DFN1006-2

BAS70L Parametric

Parameter NameAttribute value
Parts packaging codeDFN1006-2
Reach Compliance Codeunknown
Diode typeRECTIFIER DIODE
Base Number Matches1
Production specification
Surface mount schottky barrier diode
FEATURES
Low turn-on voltage.
Fast switching.
BAS70L
Pb
Lead-free
.
PN Junction guard ring for transient and
Ultra-small surface mount package.
Also available in lead free version.
APPLICATIONS
High speed switching applications.
Circuit protecting.
Voltage clamping.
DFN1006-2
ORDERING INFORMATION
Type No.
BAS70L
Marking
73
Package Code
DFN1006-2
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Reverse Voltage
RMS Reverse voltage
Forward Continuous Current
Non-Repetitive Peak Forward Surge Current
@t
p
<1.0s
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
I
FSM
P
d
R
θjA
T
j
T
STG
Limits
70
49
70
100
200
625
-55 to +125
-65 to +150
Unit
V
V
mA
mA
mW
℃/W
Q019
Rev.A
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