BAS70VV
70 V, 70 mA Schottky barrier triple isolated diode in SOT666
Rev. 01 — 10 September 2004
Product data sheet
1. Product profile
1.1 General description
Planar Schottky barrier triple diode with an integrated guard ring for stress protection.
Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small
SMD plastic package.
1.2 Features
s
s
s
s
s
Low forward voltage
High reverse voltage
Low capacitance
Ultra small SMD plastic package
Flat leads: excellent coplanarity and improved thermal behavior.
1.3 Applications
s
s
s
s
s
Ultra high-speed switching
Voltage clamping
Line termination
Inverse-polarity protection
RF applications (e.g. mixing and demodulation).
1.4 Quick reference data
Table 1:
Symbol
V
R
I
F
Quick reference data
Parameter
reverse voltage
forward current
Conditions
Min
-
-
Typ
-
-
Max
70
70
Unit
V
mA
Philips Semiconductors
BAS70VV
70 V, 70 mA Schottky barrier triple isolated diode in SOT666
2. Pinning information
Table 2:
Pin
1
2
3
4
5
6
Discrete pinning
Description
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
1
2
3
sym046
Simplified outline
6
5
4
Symbol
6
5
4
cathode (diode 2)
cathode (diode 1)
1
2
3
SOT666
3. Ordering information
Table 3:
Ordering information
Package
Name
BAS70VV
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4:
BAS70VV
Marking
Marking code
N1
Type number
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
I
FRM
I
FSM
T
j
T
amb
T
stg
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
junction temperature
ambient temperature
storage temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
-
-
-
-
-
−65
−65
70
70
70
100
150
+150
+150
V
mA
mA
mA
°C
°C
°C
Parameter
Conditions
Min
Max
Unit
9397 750 13732
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 10 September 2004
2 of 8
Philips Semiconductors
BAS70VV
70 V, 70 mA Schottky barrier triple isolated diode in SOT666
6. Thermal characteristics
Table 6:
Symbol
R
th(j-a)
[1]
[2]
Thermal characteristics
Parameter
Conditions
[1] [2]
Min
-
Typ
-
Max
700
Unit
K/W
thermal resistance from junction in free air
to ambient
Refer to SOT666 standard mounting conditions.
Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
see
Figure 1
I
F
= 1 mA
I
F
= 10 mA
I
F
= 15 mA
I
R
reverse current
see
Figure 2
V
R
= 50 V
V
R
= 70 V
C
d
[1]
[1]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
410
750
1
100
10
2
mV
mV
V
nA
µA
pF
diode
capacitance
V
R
= 0 V; f = 1 MHz;
see
Figure 4
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
9397 750 13732
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 10 September 2004
3 of 8
Philips Semiconductors
BAS70VV
70 V, 70 mA Schottky barrier triple isolated diode in SOT666
10
2
I
F
(mA)
10
mra803
10
2
I
R
(µA)
10
(1)
mra805
1
1
10
−1
10
−1
(1)
(2)
(3)
(4)
(2)
10
−2
(3)
10
−2
0
0.2
0.4
0.6
0.8
V
F
(V)
1
10
−3
0
20
40
60
V
R
(V)
80
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
(4) T
amb
=
−40 °C.
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig 1. Forward current as a function of forward
voltage; typical values.
10
3
r
diff
(Ω)
Fig 2. Reverse current as a function of reverse
voltage; typical values.
mra804
mra802
2
C
d
(pF)
1.5
10
2
1
10
0.5
1
10
−1
1
10
I
F
(mA)
10
2
0
0
20
40
60
V
R
(V)
80
f = 10 kHz.
f = 1 MHz.
Fig 3. Differential forward resistance as a function of
forward current; typical values.
Fig 4. Diode capacitance as a function of reverse
voltage; typical values.
9397 750 13732
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 10 September 2004
4 of 8
Philips Semiconductors
BAS70VV
70 V, 70 mA Schottky barrier triple isolated diode in SOT666
8. Package outline
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
Y S
HE
6
5
4
pin 1 index
A
1
e1
e
2
bp
3
w
M
A
Lp
detail X
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
0.6
0.5
b
p
0.27
0.17
c
0.18
0.08
D
1.7
1.5
E
1.3
1.1
e
1.0
e
1
0.5
H
E
1.7
1.5
L
p
0.3
0.1
w
0.1
y
0.1
OUTLINE
VERSION
SOT666
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
Fig 5. Package outline SOT666.
9397 750 13732
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 10 September 2004
5 of 8
京公网安备 11010802033920号
EEWORLD
