DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
BAT721 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1999 May 06
2001 Oct 12
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
FEATURES
•
Ultra high switching speed
•
Low forward voltage
•
Guard ring protected
•
Small plastic SMD package.
APPLICATIONS
•
Ultra high-speed switching
•
Voltage clamping
•
Protection circuits.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT23 small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
MARKING
TYPE NUMBER
BAT721
BAT721A
BAT721C
BAT721S
Note
1.
∗
= p : Made in Hong Kong.
∗
= t : Made in Malaysia.
∗
= W: Made in China.
MARKING
CODE
(1)
L7∗
L8∗
L9∗
L0∗
1
3
2
n.c.
MLC357
BAT721 series
PINNING
BAT721
PIN
A
1
2
3
a
n.c.
k
k
1
k
2
C
a
1
a
2
S
a
1
k
2
1
3
2
MLC360
a
1
, a
2
k
1
, k
2
k
1
, a
2
Fig.3
BAT721A diode
configuration (symbol).
handbook, 2 columns
3
3
1
Top view
2
1
MGC421
2
MLC359
Fig.1
Simplified outline
(SOT23) and pin
configuration.
Fig.4
BAT721C diode
configuration (symbol).
3
1
2
MLC358
Fig.2
BAT721 single diode
configuration (symbol).
Fig.5
BAT721S diode
configuration (symbol).
2001 Oct 12
2
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
I
FSM
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
non-repetitive peak forward current t
p
= 8.3 ms half sinewave; JEDEC
method
storage temperature
junction temperature
CONDITIONS
−
−
−
−65
−
MIN.
BAT721 series
MAX.
40
200
1
+150
125
V
UNIT
mA
A
°C
°C
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
continuous forward voltage
see Fig.6
I
F
= 10 mA
I
F
= 100 mA
I
F
= 200 mA
I
R
C
d
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
PARAMETER
CONDITIONS
VALUE
500
UNIT
K/W
continuous reverse current
diode capacitance
V
R
= 30 V; see Fig.7
V
R
= 30 V; T
j
= 100
°C;
see Fig.7
f = 1 MHz; V
R
= 0; see Fig.8
−
−
−
−
−
40
300
420
550
15
3
50
mV
mV
mV
µA
mA
pF
CONDITIONS
MIN.
MAX.
UNIT
thermal resistance from junction to ambient note 1
2001 Oct 12
3
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
GRAPHICAL DATA
MBK575
BAT721 series
10
3
handbook, halfpage
IF
(mA)
10
2
(1)
(2)
handbook, halfpage
1
MBK576
IR
(mA)
(1)
10
−1
10
(2)
10
−2
1
(3)
(3)
10
−1
150
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
250
350
450
VF (mV)
550
10
−3
0
10
20
30 V (V) 40
R
(1) T
amb
= 125
°C.
(2) T
amb
= 85
°C.
(3) T
amb
= 25
°C.
Fig.6
Forward current as a function of forward
voltage; typical values.
Fig.7
Reverse current as a function of reverse
voltage; typical values.
10
2
handbook, halfpage
MBK574
Cd
(pF)
10
1
0
10
20
30
VR (V)
40
f = 1 MHz; T
j
= 25
°C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
2001 Oct 12
4
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
BAT721 series
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2001 Oct 12
5
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