BCY71DCSMG4 datasheet, PDF - EEWORLD Datasheet

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BCY71DCSMG4: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6; CategoryDiscrete semiconductor The transistor; File Size155KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BCY71DCSMG4 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6

BCY71DCSMG4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-CDSO-N6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	45 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	100
JEDEC-95 code	MO-041BB
JESD-30 code	R-CDSO-N6
JESD-609 code	e4
Number of components	2
Number of terminals	6
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Base Number Matches	1

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SILICON EPITAXIAL

PNP TRANSISTOR

BCY71DCSM

•

Low Current / Low Voltage Transistor

In A Dual Ceramic Hermetic Package

•

Designed For General Purpose

Industrial Applications

•

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

ICM

Tstg

Collector - Base Voltage

Collector - Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Peak Collector Current

TA = 25°

Total Power Dissipation at

Derate Above 25°

Junction Temperature Range

Storage Temperature Range

Each Side Total Device

-45V

-5V

-200mA

350mW

500mW

2mW/°

2.9mW/°

-65 to +200°

THERMAL PROPERTIES

(Each Side.)

Symbols Parameters

θJA

Thermal Resistance, Junction To Ambient

θJC

Thermal Resistance, Junction To Case

* Total device power dissipation limited by package.

Min.

Typ. Max. Units

500 °

C/W

150 °

C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab.co.uk

Document Number 8108

Issue 1

Website:

http://www.semelab.co.uk

BCY71DCSMG4 Related Products

	BCY71DCSMG4	BCY71DCSM
Description	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6	Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon, MO-041BB, HERMETIC SEALED, CERAMIC, LCC2-6
Is it Rohs certified?	conform to	incompatible
package instruction	SMALL OUTLINE, R-CDSO-N6	SMALL OUTLINE, R-CDSO-N6
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.2 A	0.2 A
Collector-emitter maximum voltage	45 V	45 V
Configuration	SEPARATE, 2 ELEMENTS	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	100	100
JEDEC-95 code	MO-041BB	MO-041BB
JESD-30 code	R-CDSO-N6	R-CDSO-N6
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	200 °C	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz
Base Number Matches	1	1

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