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BDS28BISO

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size112KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BDS28BISO Overview

Transistor

BDS28BISO Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
Maximum collector current (IC)30 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
Maximum operating temperature200 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)150 W
surface mountNO
Base Number Matches1

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Index Files: 633  1934  1628  1721  2235  13  39  33  35  45 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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