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D2008UK.04

Description
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-39,
CategoryDiscrete semiconductor    The transistor   
File Size20KB,2 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

D2008UK.04 Overview

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-39,

D2008UK.04 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW NOISE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandVERY HIGH FREQUENCY BAND
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
TetraFET
D2008UK.04
METAL GATE RF SILICON FET
MECHANICAL DATA
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
12.70
(0.500)
min.
0.89 max.
(0.035)
7.75 (0.305)
8.51 (0.335)
dia.
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
FEATURES
5.08 (0.200)
typ.
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND
APPLICATIONS
2.54
(0.100)
2
1
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
3
• LOW C
rss
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 13 dB MINIMUM
45˚
TO-39 PACKAGE
PIN1 – DRAIN
PIN2 – GATE
PIN3 – SOURCE
APPLICATIONS
VHF COMMUNICATIONS
from DC to 400MHz
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
Prelim. 9/99

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