D1011UK-P datasheet, PDF - EEWORLD Datasheet

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D1011UK-P: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SO-8; CategoryDiscrete semiconductor The transistor; File Size15KB，2 Pages; ManufacturerSEMELAB

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D1011UK-P Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, SO-8

D1011UK-P Parametric

Parameter Name	Attribute value
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-XDSO-G8
Contacts	8
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	70 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-XDSO-G8
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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TetraFET

INA

MECHANICAL DATA

D1011UK-P

METAL GATE RF SILICON FET

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

10W – 28V – 1GHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

• SUITABLE FOR BROAD BAND APPLICATIONS

• VERY LOW C

rss

• SIMPLE BIAS CIRCUITS

• LOW NOISE

• HIGH GAIN – 13 dB MINIMUM

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSS

GSS

D(sat)

stg

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

30W

70V

±20V

–65 to 150°C

200°C

Prelim. 1/96

Semelab plc.

Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

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