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Datasheet> All Categories > Discrete semiconductor> The transistor> BF622
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BF622

Description
Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size17KB，1 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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BF622 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon

BF622 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PSSO-F3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSSO-F3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.6 V
Base Number Matches1

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Download Datasheet
SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTORS
ISSUE 3 – JANUARY 1996
7
FEATURES
* High breakdown and low saturation voltages
APPLICATIONS
* Suitable for video output stages in TV sets
* Switching power supplies
COMPLEMENTARY TYPE:
BF620 – BF621
BF622 – BF623
PARTMARKING DETAIL –
BF620 – DC
BF622 – DA
BF620
BF622
C
E
C
B
SOT89
BF620
300
300
5
100
50
1
-65 to +150
BF622
250
250
UNIT
V
V
V
mA
mA
W
°C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Colector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Collector-Base Capacitance
BF620
BF622
BF620
BF622
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CER
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
50
100 Typical
0.8 Typical
MHz
pF
MIN.
300
250
300
250
5
10
20
50
10
10
0.6
0.9
MAX.
UNIT
V
V
V
nA
µA
nA
µA
µA
V
V
CONDITIONS.
I
C
=10µA, I
E
=0
I
C
=10µA, I
E
=0
I
C
=1mA, I
B
=0*
I
C
=1mA, I
B
=0*
I
E
=100µA, I
C
=0
V
CB
=200V, I
E
=0
V
CB
=200V, I
E
=0 †
V
CE
=200V, R
BE
=2.7KΩ
V
CE
=200V, R
BE
=2.7KΩ †
V
EB
=5V, I
C
=0
I
C
=30mA, I
B
=5mA*
I
C
=20mA, I
B
=2mA*
I
C
=25mA, V
CE
=20V*
I
C
=10mA, V
CE
=10V
f=100MHz
V
CB
=30V, f=1MHz
Emitter-Base Breakdown Voltage
†T
amb
=150°C
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical characteristics graphs see FMMTA42 datasheet.
3 - 38

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