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BLV910

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size72KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BLV910 Overview

Transistor

BLV910 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)1.5 A
ConfigurationSingle
Minimum DC current gain (hFE)30
Maximum operating temperature200 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)30 W
surface mountNO
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BLV910
UHF power transistor
Product specification
1995 Apr 11
Philips Semiconductors
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