FZ400R06KF2 datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> FZ400R06KF2

FZ400R06KF2: DescriptionInsulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size218KB，3 Pages; ManufacturerEUPEC [eupec GmbH]

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FZ400R06KF2 Overview

Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel,

FZ400R06KF2 Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
Maximum collector current (IC)	400 A
Collector-emitter maximum voltage	600 V
Configuration	SINGLE WITH BUILT-IN DIODE
JESD-30 code	R-PUFM-X4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Base Number Matches	1

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IGBT Standard Modules

Type

CES

CRM

= 1 ms

Dual modules

FF 15 R 12 KF

FF 25 R 06 KF2

FF 25 12 KF

FF 25 R 12 KF2

FF 30 R 17 KF

FF 50 R 06 KF2

FF 50 R 06 KF3

FF 50 R 12 KF

FF 50 R 12 KF2

FF 75 R 06 KF2

FF 75 R 06 KF3

FF 75 R 12 KF

FF 75 R 12 KF2

FF 90 R 17 KF

FF 100 R 06 KF2

FF 100 R 06 KF3

FF 100 R 12 KF

FF 100 R 12 KF2

FF 150 R 06 KF2

FF 150 R 06 KF3

FF 150 R 12 KF

FF 150 R 12 KF2

FF 180 R 17 KF

FF 200 R 06 KF2

FF 200 R 06 KF3

FF 200 R 12 KF

FF 200 R 12 KF2

FF 300 R 06 KF2

FF 300 R 06 KF3

FF 300 R 12 KF2

FF 400 R 06 KF2

FF 400 R 06 KF3

Single modules

FZ 200 R 12 KF

FZ 200 R 12 KF2

FZ 240 R 17 KF

FZ 300 R 12 KF

FZ 300 R 12 KF2

FZ 360 R 17 KF

FZ 400 R 06 KF2

FZ 400 R 06 KF3

FZ 400 R 12 KF

FZ 400 R 12 KF2

FZ 500 R 12 KF

FZ 600 R 12 KF2

FZ 800 R 06 KF3

1200

1700

1200

1700

600

1200

600

200

240

300

360

400

500

600

800

400

480

600

720

800

1000

1200

1600

3,0

3,2

3,0

3,2

2,7

2,0

3,0

2,1

0,4

0,5

0,4

0,5

0,4

0,60

0,40

0,60

0,40

0,35

0,60

0,35

1200

600

1200

1700

600

1200

600

1200

1700

600

1200

600

1200

1700

600

1200

600

1200

600

100

150

180

200

300

400

100

150

180

200

300

360

400

600

800

3,0

2,7

3,0

3,2

2,7

2,1

3,0

2,7

2,1

3,0

3,2

2,7

2,1

3,0

2,7

2,1

3,0

3,2

2,7

2,1

3,0

2,7

2,1

3,0

2,7

2,1

0,4

0,5

0,4

0,5

0,4

0,5

0,4

0,50

0,40

0,50

0,40

0,35

0,50

0,40

0,35

0,50

0,40

0,35

0,60

0,40

0,35

0,60

0,40

0,35

0,60

0,40

0,35

0,60

0,40

0,35

IGBT-Standardmodule

CEsat

tvj=25°C

typ.

µs

tvj=25°C

typ.

µs

tvj=25°C

typ.

thJC

vj max

°C/W

°C

tvj=25°C

per arm

typ.

0,20

0,15

0,20

0,60

0,15

0,20

0,15

0,20

0,60

0,15

0,20

0,15

0,20

0,60

0,15

0,20

0,15

0,20

0,15

0,20

0,60

0,20

0,60

0,15

0,20

0,15

1,000

0,500

0,250

0,500

0,450

0,310

0,350

0,320

0,200

0,220

0,110

0,310

0,280

0,150

0,190

0,180

0,160

0,110

0,069

0,160

0,140

0,088

0,096

0,100

0,090

0,069

0,088

0,089

0,052

0,062

0,063

0,350

0,089

0,074

0,052

0,042

0,035

0,045

150

µs

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