DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
BC847F series
NPN general purpose transistors
Product specification
Supersedes data of 2000 Oct 23
2000 Dec 04
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 65 V).
APPLICATIONS
•
General purpose switching and amplification especially
in portable equipment.
DESCRIPTION
handbook, halfpage
BC847F series
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
1
2
MAM410
NPN general purpose transistor in an SC-89 (SOT490)
plastic package.
PNP complement: BC857F series.
1
2
MARKING
TYPE NUMBER
BC847AF
BC847BF
BC847CF
1E
1F
1G
MARKING CODE
Fig.1
Top view
Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
50
45
5
100
200
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2000 Dec 04
2
Philips Semiconductors
Product specification
NPN general purpose transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
BC847AF
BC847BF
BC847CF
V
BE
V
CEsat
C
c
f
T
F
base-emitter voltage
collector-emitter saturation voltage
collector capacitance
transition frequency
noise figure
I
C
= 2 mA; V
CE
= 5 V
I
C
= 10 mA; V
CE
= 5 V
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
V
CB
= 10 V; I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 5 V; I
C
= 10 mA;
f = 100 MHz
I
C
= 200
µA;
V
CE
= 5 V;
R
S
= 2 kΩ; f = 1 kHz;
B = 200 Hz
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
I
C
= 2 mA; V
CE
= 5 V
110
200
420
580
−
−
−
−
100
−
−
−
−
MIN.
PARAMETER
CONDITIONS
BC847F series
VALUE
500
UNIT
K/W
thermal resistance from junction to ambient in free air; note 1
MAX.
15
5
100
220
450
800
700
770
200
400
1.5
−
10
UNIT
nA
µA
nA
mV
mV
mV
mV
pF
MHz
dB
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2000 Dec 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
GRAPHICAL INFORMATION BC847AF
MGT723
BC847F series
handbook, halfpage
400
handbook, halfpage
V
hFE
(1)
1200
BE
(mV)
1000
MGT724
300
800
(1)
(2)
200
(2)
600
(3)
(3)
400
100
200
0
10
−1
1
10
10
2
I C (mA)
10
3
0
10
−1
V
CE
= 5 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
1
10
10
2
I C (mA)
10
3
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.3
Fig.2 DC current gain; typical values.
Base-emitter voltage as a function of
collector current; typical values.
10
3
handbook, halfpage
VCEsat
(mV)
MGT725
handbook, halfpage
1200
VBEsat
(mV)
1000
MGT726
(1)
800
(2)
10
2
(1)
(2)
(3)
600
(3)
400
200
10
10
−1
1
10
10
2
I C (mA)
10
3
0
10
−1
1
10
10
2
I C (mA)
10
3
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Dec 04
4
Philips Semiconductors
Product specification
NPN general purpose transistors
GRAPHICAL INFORMATION BC847BF
MGT727
BC847F series
handbook, halfpage
600
handbook, halfpage
(1)
hFE
500
1200
VBE
(mV)
1000
MGT728
(1)
400
(2)
800
(2)
300
600
(3)
200
(3)
400
100
200
0
10
−1
1
10
10
2
I C (mA)
10
3
0
10
−2
10
−1
1
10
V
CE
= 5 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 5 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
10
2
10
3
I C (mA)
Fig.7
Fig.6 DC current gain; typical values.
Base-emitter voltage as a function of
collector current; typical values.
10
4
handbook, halfpage
VCEsat
(mV)
10
3
MGT729
handbook, halfpage
1200
VBEsat
(mV)
1000
MGT730
(1)
800
(2)
600
(3)
10
2
(1)
400
(3) (2)
200
10
10
−1
1
10
10
2
I C (mA)
10
3
0
10
−1
1
10
10
2
I C (mA)
10
3
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.9
Base-emitter saturation voltage as a
function of collector current; typical values.
2000 Dec 04
5
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