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BDB01C

Description
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE
CategoryDiscrete semiconductor    The transistor   
File Size131KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BDB01C Overview

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AE

BDB01C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
Collector-based maximum capacity30 pF
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-226AE
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment2.5 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
VCEsat-Max0.7 V
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
One Watt Amplifier Transistors
Order this document
by BDB01C/D
NPN Silicon
COLLECTOR
3
2
BASE
BDB01C,D
1
2
1
EMITTER
3
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
BDB01C
80
80
5.0
0.5
1.0
8.0
2.5
20
– 55 to +150
BDB01D
100
100
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
PD
TJ, Tstg
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
125
50
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Voltage
(IC = 10 mA, IB = 0)
Collector Cutoff Current
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
Emitter Cutoff Current
(IC = 0, VEB = 5.0 V)
V(BR)CEO
BDB01C
BDB01D
ICBO
BDB01C
BDB01D
IEBO
0.01
0.01
100
nAdc
80
100
Vdc
m
Adc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1

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