FMMTA92R datasheet, PDF - EEWORLD Datasheet

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FMMTA92R: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size70KB，2 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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FMMTA92R Overview

Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

FMMTA92R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	25
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.33 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz
Base Number Matches	1

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SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 4 - MARCH 2001

✪

PARTMARKING DETAILS:

– FMMTA92 - 4E

– FMMTA92R - 8E

FMMTA92

COMPLEMENTARY TYPES:

–

FMMTA92 - FMMTA42

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

= 25°C

Operating and Storage Temperature Range

SYMBOL

CBO

CEO

EBO

tot

stg

FMMTA92

-300

-5

-200

330

-55 to +150

UNIT

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

FMMTA92

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off

Current

Emitter Cut-Off Current

Collector-Emitter Saturation

Voltage

Base-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

Transition Frequency

Output Capacitance

SYMBOL

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

BE(sat)

MHz

MIN.

-300

-5

-0.25

-0.1

-0.5

-0.9

MAX.

UNIT

CONDITIONS.

=-100

A, I

=-1mA, I

=0*

=-100

A, I

=-200V, I

=-160V, I

=0-

=-3V, I

=-20mA, I

=-2mA*

=-20mA, I

=-2mA*

=-1mA, V

=10V*

=-10mA, V

=10V*

=-30mA,V

=-10V*

=-10mA, V

=-20V

f=20MHz

=-20V, f=1MHz

obo

*Measured under pulsed conditions. Pulse width=300

s. Duty cycle

≤

TBA

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