Low Noise Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
BC549
30
30
5.0
100
625
5.0
1.5
12
–55 to +150
BC550
45
50
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
BC549B,C
BC550B,C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
3
EMITTER
COLLECTOR
1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 10
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0)
(V
CB
= 30 V, I
E
= 0, T
A
= +125°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
V
(BR)CEO
BC549B,C
BC550B,C
V
(BR)CBO
BC549B,C
BC550B,C
V
(BR)EBO
I
CBO
—
—
I
EBO
—
—
—
—
15
5.0
15
nAdc
µAdc
nAdc
30
50
5.0
—
—
—
—
—
—
Vdc
30
45
—
—
—
—
Vdc
Vdc
©
Semiconductor Components Industries, LLC, 2001
1
February, 2001 – Rev. 1
Publication Order Number:
BC549B/D
BC549B,C BC550B,C
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.5
1.0 2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mAdc)
100 200
0
0.1
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.5
1.0 2.0
5.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
50
100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 2. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 3. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
100
80
60
40
30
20
10
7.0
5.0
C
ib
T
A
= 25°C
V
CE
= 10 V
T
A
= 25°C
3.0
2.0
C
ob
f T, CURRENT-GAIN
0.5 0.7
1.0
2.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
50
1.0
0.4
0.6
1.0
2.0
4.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
Figure 4. Current–Gain — Bandwidth Product
Figure 5. Capacitance
r b, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120
0.1
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25°C
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 6. Base Spreading Resistance
http://onsemi.com
3
BC549B,C BC550B,C
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
---
0.250
---
0.080
0.105
---
0.100
0.115
---
0.135
---
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
---
6.35
---
2.04
2.66
---
2.54
2.93
---
3.43
---
A
R
P
SEATING
PLANE
B
F
L
K
D
X X
G
H
V
1
J
C
N
N
SECTION X–X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor
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BC549B/D
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