S206A1 datasheet, PDF - EEWORLD Datasheet

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S206A1: DescriptionSilicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-202; CategoryAnalog mixed-signal IC Trigger device; File Size130KB，2 Pages; ManufacturerHutson Industries

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S206A1 Overview

Silicon Controlled Rectifier, 6A I(T)RMS, 6000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element, TO-202

S206A1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	SENSITIVE GATE
Shell connection	ANODE
Configuration	SINGLE
Critical rise rate of minimum off-state voltage	5 V/us
Maximum DC gate trigger current	0.2 mA
Maximum DC gate trigger voltage	0.8 V
Maximum holding current	6 mA
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Maximum leakage current	0.1 mA
On-state non-repetitive peak current	60 A
Number of components	1
Number of terminals	3
Maximum on-state current	6000 A
Maximum operating temperature	110 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum rms on-state current	6 A
Maximum repetitive peak off-state leakage current	100 µA
Off-state repetitive peak voltage	100 V
Repeated peak reverse voltage	100 V
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SCR
Base Number Matches	1

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MAXIMUM RATINGS

SYMBOL VDRM

50

100

200

400

600

DEVICE NUMBERS

200µA Gate

S106F*

S106A*

S106B*

S106D*

S106M*

S206F*

S206A*

S206B*

S206D*

S206M*

S306F*

S306A*

S306B*

S306D*

S306M*

UNITS

REPETITIVE PEAK OFF-STATE VOLTAGE (1)

GATE OPEN, AND TJ = 110° C

VDRM &

VRRM

VOLT

500µA Gate

50

100

200

400

600

S107F*

S107A*

S107B*

S107D*

S107M*

4.0

40

1

15

0.1

S207F*

S207A*

S207B*

S207D*

S207M*

6.0

60

1

15

0.1

-40 to +150

-40 to +110

S307F*

S307A*

S307B*

S307D*

S307M*

8.0

80

1

15

0.1

AMP

WATT

°C

RMS ON-STATE CURRENT AT TC = 80º C AND

CONDUCTION, ANGLE OF 360º

PEAK SURGE (NON-REPETITIVE) ON-STATE CURRENT,

ONE-CYCLE, AT 50HZ OR 60HZ

PEAK GATE - TRIGGER CURRENT FOR 3µSEC. MAX.

PEAK GATE - POWER DISSIPATION AT IGT < IGTM

AVERAGE GATE - POWER DISSIPATION

STORAGE TEMPERATURE RANGE

OPERATING TEMPERATURE RANGE, Tj

ELECTRICAL CHARACTERISTICS

AT SPECIFIED CASE TEMPERATURE

PEAK OFF - STATE CURRENT (1)

TC = 110° C VDRM &VRRM = MAX. RATING

MAXIMUM ON - STATE VOLTAGE, (PEAK) AT TC = 25° C

AND IT = RATED AMPS

DC HOLDING CURRENT, (1)AND TC = 25° C

CRITICAL RATE-OF-RISE OF OFF-STATE VOLTAGE, (1)

FOR VD = VDRM GATE OPEN, TC = 110° C

DC GATE-TRIGGER CURRENT FOR ANODE

VOLTAGE - 6VDC, RL = 100

Ω

AND

AT TC = 25° C

DC GATE - TRIGGER VOLTAGE FOR ANODE VOLTAGE =

6VDC, RL = 100

Ω

AND AT TC = 25° C

GATE CONTROLLED TURN-ON TIME FOR

t D+ t R, IGT = 20 mA and TC = 25° C

THERMAL RESISTANCE, JUNCTION-TO-CASE

IT(RMS)

ITSM

IGTM

PGM

PG(AV)

Tstg

Toper

IDRM &

IRRM

VTM

IHO

CRITICAL

dv/dt

0.1

2.2

3

8

200

0.1

1.6

6

5

200

500

0.8

2

4.4

0.1

2.5

6

5

200

500

0.8

2

4.4

MA

MAX.

VOLT

MAX.

MA

MAX.

V/µSEC.

µA MAX.

VOLT

MAX.

µsec.

°C / WATT

TYP

IGT

500

VGT

T gt

R0J-C

0.8

1.2

5

*Note:

Device number suffix 1 = with TAB (Type 1)

Device number suffix 2 = no TAB (Type 2)

(1) R G – K = 1 K

Ω

SOLID STATE CONTROL DEVICES

34

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