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T378N12TOF

Description
Silicon Controlled Rectifier, 800A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size269KB,10 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric Compare View All

T378N12TOF Overview

Silicon Controlled Rectifier, 800A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element,

T378N12TOF Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ConfigurationSINGLE
Maximum DC gate trigger current200 mA
JESD-30 codeO-CXDB-X4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current800 A
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountYES
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Trigger device typeSCR
Base Number Matches1
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T378N
V
DRM
,V
RRM
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40°C... T
vj max
enndaten
repetitive peak forward off-state and reverse voltages
Vorwärts-Stoßspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
C
= 85 °C
T
C
= 65 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
th
5.Kennbuchstabe / 5 letter F
T
vj
= -40°C... T
vj max
Elektrische Eigenschaften
T
vj
= +25°C... T
vj max
V
DSM
V
RSM
I
TRMSM
I
TAVM
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
1200
1400
1600
1200
1400
1600
1300
1500
1700
800
V
V
V
V
V
V
V
V
V
A
378 A
510 A
7100 A
6350 A
252 10³ A²s
202 10³ A²s
150 A/µs
1000 V/µs
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
100 A
i
T
1800 A
on-state characteristic
T
vj
= T
vj max
, i
T
= 1200 A
T
vj
= T
vj max
, i
T
= 300 A
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
A=
B=
C=
D=
I
GT
V
GT
I
GD
V
GD
I
H
max.
max.
1,85 V
1,10 V
0,80 V
0,75 mΩ
v
T
=
A
+
B
i
T
+
C
ln ( i
T
+
1)
+
D
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
i
T
T
vj
= 25 °C, v
D
= 12V
T
vj
= 25 °C, v
D
= 12V
T
vj
= T
vj max
, v
D
= 12V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25°C, v
D
= 12V
9,865E-01
2,622E-04
-1,155E-01
3,953E-02
max.
max.
max.
max.
max.
max.
max.
max.
max.
200 mA
2 V
10 mA
5 mA
0,2 V
300 mA
1200 mA
50 mA
3 µs
T
vj
= 25°C, v
D
= 12V, R
GK
10
I
L
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
DIN IEC 60747-6
t
gd
T
vj
= 25 °C, i
GM
= 1 A, di
G
/dt = 1 A/µs
prepared by: H.Sandmann
approved by: J.Przybilla
date of publication: 2006-09-06
revision:
1
SZ-MA / 00-01-31, K.-A. Rüther
A02/00
Seite/page
1/10

T378N12TOF Related Products

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Description Silicon Controlled Rectifier, 800A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, Silicon Controlled Rectifier, 800A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, Silicon Controlled Rectifier, 800A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element,
Reach Compliance Code unknown unknown unknown
Configuration SINGLE SINGLE SINGLE
Maximum DC gate trigger current 200 mA 200 mA 200 mA
JESD-30 code O-CXDB-X4 O-CXDB-X4 O-CXDB-X4
Number of components 1 1 1
Number of terminals 4 4 4
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 800 A 800 A 800 A
Off-state repetitive peak voltage 1200 V 1400 V 1600 V
Repeated peak reverse voltage 1200 V 1400 V 1600 V
surface mount YES YES YES
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UNSPECIFIED UNSPECIFIED UNSPECIFIED
Trigger device type SCR SCR SCR
Base Number Matches 1 1 1
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