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T618N14TOF

Description
Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element,
CategoryAnalog mixed-signal IC    Trigger device   
File Size182KB,4 Pages
ManufacturerEUPEC [eupec GmbH]
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T618N14TOF Overview

Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element,

T618N14TOF Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Nominal circuit commutation break time250 µs
ConfigurationSINGLE
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current250 mA
Maximum DC gate trigger voltage2.2 V
JESD-30 codeO-CEDB-N2
On-state non-repetitive peak current9500 A
Number of components1
Number of terminals2
Maximum on-state current618000 A
Maximum operating temperature125 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Certification statusNot Qualified
Maximum rms on-state current1250 A
Off-state repetitive peak voltage1400 V
Repeated peak reverse voltage1400 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Trigger device typeSCR
Base Number Matches1
European Power-
Semiconductor and
Electronics Company
Marketing Information
T 618 N
ø30
C
T 619 N
ø36
C
ø30
ø3,5 x 2 deep
on both sides
A
ø36
A
HK
plug 2,8 x 0,8
3,5 x 3,5 deep
on both sides
HK
plug 4,8 x 0,8
G
plug
2,8 x 0,8
2
4
G
plug
2,8 x 0,8
VWK Nov. 1996

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Description Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 1000V V(DRM), 1000V V(RRM), 1 Element, Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, Silicon Controlled Rectifier, 1250A I(T)RMS, 618000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
Nominal circuit commutation break time 250 µs 250 µs 250 µs 250 µs 250 µs 250 µs 250 µs 250 µs 250 µs
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us 1000 V/us
Maximum DC gate trigger current 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA 250 mA
Maximum DC gate trigger voltage 2.2 V 2.2 V 2.2 V 2.2 V 2.2 V 2.2 V 2.2 V 2.2 V 2.2 V
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
On-state non-repetitive peak current 9500 A 9500 A 9500 A 9500 A 9500 A 9500 A 9500 A 9500 A 9500 A
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Maximum on-state current 618000 A 618000 A 618000 A 618000 A 618000 A 618000 A 618000 A 618000 A 618000 A
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum rms on-state current 1250 A 1250 A 1250 A 1250 A 1250 A 1250 A 1250 A 1250 A 1250 A
Off-state repetitive peak voltage 1400 V 800 V 600 V 1200 V 1000 V 600 V 1000 V 800 V 1200 V
Repeated peak reverse voltage 1400 V 800 V 600 V 1200 V 1000 V 600 V 1000 V 800 V 1200 V
surface mount YES YES YES YES YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END END END END END END
Trigger device type SCR SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1 1 1 1
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