EEWORLDEEWORLDEEWORLD

Part Number

Search

T828N07TOF

Description
Silicon Controlled Rectifier, 828000mA I(T), 700V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size313KB,5 Pages
ManufacturerEUPEC [eupec GmbH]
Download Datasheet Parametric Compare View All

T828N07TOF Overview

Silicon Controlled Rectifier, 828000mA I(T), 700V V(DRM),

T828N07TOF Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Nominal circuit commutation break time150 µs
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage2 V
Maximum holding current200 mA
Maximum leakage current50 mA
On-state non-repetitive peak current12000 A
Maximum on-state voltage1.65 V
Maximum on-state current828000 A
Maximum operating temperature140 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage700 V
surface mountNO
Trigger device typeSCR
Base Number Matches1

T828N07TOF Related Products

T828N07TOF T828N06TOF T828N04TOF T828N02TOF T828N02TOC T828N07TOC T828N04TOC T828N06TOC
Description Silicon Controlled Rectifier, 828000mA I(T), 700V V(DRM), Silicon Controlled Rectifier, 1500A I(T)RMS, 828000mA I(T), 600V V(DRM), 600V V(RRM), 1 Element, Silicon Controlled Rectifier, 1500A I(T)RMS, 828000mA I(T), 400V V(DRM), 400V V(RRM), 1 Element, Silicon Controlled Rectifier, 1500A I(T)RMS, 828000mA I(T), 200V V(DRM), 200V V(RRM), 1 Element, Silicon Controlled Rectifier, 828000mA I(T), 200V V(DRM), Silicon Controlled Rectifier, 828000mA I(T), 700V V(DRM), Silicon Controlled Rectifier, 828000mA I(T), 400V V(DRM), Silicon Controlled Rectifier, 828000mA I(T), 600V V(DRM),
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
Nominal circuit commutation break time 150 µs 150 µs 150 µs 150 µs 150 µs 150 µs 150 µs 150 µs
Critical rise rate of minimum off-state voltage 1000 V/us 1000 V/us 1000 V/us 1000 V/us 400 V/us 400 V/us 400 V/us 400 V/us
Maximum DC gate trigger current 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA
Maximum DC gate trigger voltage 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
Maximum holding current 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA 200 mA
Maximum leakage current 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA 50 mA
On-state non-repetitive peak current 12000 A 12000 A 12000 A 12000 A 12000 A 12000 A 12000 A 12000 A
Maximum on-state current 828000 A 828000 A 828000 A 828000 A 828000 A 828000 A 828000 A 828000 A
Maximum operating temperature 140 °C 140 °C 140 °C 140 °C 140 °C 140 °C 140 °C 140 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C -40 °C
Off-state repetitive peak voltage 700 V 600 V 400 V 200 V 200 V 700 V 400 V 600 V
surface mount NO YES YES YES NO NO NO NO
Trigger device type SCR SCR SCR SCR SCR SCR SCR SCR
Base Number Matches 1 1 1 1 1 1 1 1
Maximum on-state voltage 1.65 V - - - 1.65 V 1.65 V 1.65 V 1.65 V

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1201  1702  943  2232  1470  25  35  19  45  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号