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BYT56M

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size147KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Download Datasheet Parametric View All

BYT56M Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, HERMETICALLY SEALED, GLASS PACKAGE-2

BYT56M Parametric

Parameter NameAttribute value
package instructionE-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationFAST SOFT RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.4 V
JESD-30 codeE-LALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current5 µA
Maximum reverse recovery time0.1 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BYT56M
SINTERED GLASS JUNCTION
FAST AVALANCHE RECTIFIER
VOLTAGE:1000V
CURRENT: 3.0A
FEATURE
Glass passivated
Hermetically sealed package
Low reverse current
Soft recovery characteristics
SOD-64
MECHANICAL DATA
Case: SOD-64 sintered glass case
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Polarity: color band denotes cathode end
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8”lead length at I =10mm
Peak Forward Surge Current
at tp=10ms,half sinewave
Maximum Forward Voltage at rated Forward Current
at IF=3.0A
Non-repetitive peak reverse avalanche energy
at I
BR(R)
=0.4A
Maximum DC Reverse Current
at rated DC blocking voltage
Maximum Reverse Recovery Time
Typical Thermal Resistance
Storage and Operating Junction Temperature
Ta =25
°C
Ta =150
°C
(Note 1)
(Note 2)
BYT56M
1000
700
1000
3.0
80
1.4
10
5.0
150.0
100
70
-55 to +175
units
V
V
V
A
A
V
mJ
V
RRM
V
RMS
V
DC
I
FAV
I
FSM
V
F
E
RSM
I
R
Trr
Rth(ja)
Tstg, Tj
µ
A
µ
A
nS
°C
/W
°C
Note:
1. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
2. on PC board with spacing 25 mm
Rev.A1
www.gulfsemi.com
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