BF256ARL datasheet, PDF - EEWORLD Datasheet

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BF256ARL: DescriptionUHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size121KB，3 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BF256ARL Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN

BF256ARL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-92
package instruction	CASE 29, 3 PIN
Contacts	3
Manufacturer packaging code	CASE 29
Reach Compliance Code	compliant
Other features	EUROPEAN PART NUMBER
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
FET technology	JUNCTION
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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BF256A

BF256A is a Preferred Device

JFET - General Purpose

N–Channel

N–Channel Junction Field Effect Transistor designed for VHF and

UHF applications.

•

http://onsemi.com

Low Cost TO–92 Type Package

Forward Transfer Admittance, Y

fs

= 4.5 mmhos (Min)

Transfer Capacitance – C

rss

= 0.7 (Typ)

Power Gain at f = 800 MHz, Typ. = 11 dB

1 DRAIN

3

GATE

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage

Gate–Source Voltage

Forward Gate Current

Total Device Dissipation

@ T

A

= 25°C

Derate above 25°C

Operating and Storage Channel

Temperature Range

T

channel

,

T

stg

Symbol

V

DS

V

DG

V

GS

I

G(f)

P

D

360

2.88

–65 to +150

mW

mW/°C

°C

BF

256A

YWW

Value

30

10

Unit

Vdc

mAdc

1

2

3

TO–92

CASE 29

STYLE 5

2 SOURCE

MARKING DIAGRAMS

500

P

D

, MAXIMUM CONTINUOUS

POWER DISSIPATION (mW)

Y

WW

= Year

= Work Week

400

ORDERING INFORMATION

300

Device

BF256A

200

Preferred

devices are recommended choices for future use

and best overall value.

Package

TO–92

Shipping

5000 Units/Box

100

0

25

50

75

100

125

150

175

200

FREE AIR TEMPERATURE (°C)

Figure 1. Power Derating Curve

©

Semiconductor Components Industries, LLC, 2001

337

September, 2001 – Rev. 3

Publication Order Number:

BF256A/D

BF256ARL Related Products

	BF256ARL	BF256AZL1	BF256ARL1	BF256ARLRA	BF256ARLRE	BF256ARLRM	BF256ARLRP
Description	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN	UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Parts packaging code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
package instruction	CASE 29, 3 PIN	CYLINDRICAL, O-PBCY-T3	CASE 29, 3 PIN	CASE 29, 3 PIN	CASE 29, 3 PIN	CASE 29, 3 PIN	CASE 29, 3 PIN
Contacts	3	3	3	3	3	3	3
Manufacturer packaging code	CASE 29	CASE 29	CASE 29	CASE 29	CASE 29	CASE 29	CASE 29
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	30 V	30 V	30 V	30 V	30 V	30 V	30 V
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225	225	225	225	225	225	225
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal surface	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	ON Semiconductor	-	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor

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