BCX19TC datasheet, PDF - EEWORLD Datasheet

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BCX19TC: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size35KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCX19TC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	SOT-23, 3 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	45 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
Guideline	CECC50002-236
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.62 V
Base Number Matches	1

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SOT23 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS –

BCX19 -

BCX19R -

BCX17

U1

U4

BCX19

COMPLEMENTARY TYPES -

C

B

E

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Peak Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CES

V

CEO

V

EBO

I

CM

I

C

I

B

I

BM

P

TOT

T

j

:T

stg

VALUE

50

45

5

1000

500

100

200

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Collector-Base Cut-Off

Current

Emitter-Base Cut-Off

Current

Base-Emitter Voltage

Collector-Emitter

Saturation Voltage

Static Forward Current

Transfer Ratio

SYMBOL

I

CBO

MIN.

TYP.

MAX. UNIT

100

200

10

nA

µ

A

CONDITIONS.

V

CB

=20V

V

CB

=20V, T

j

=150°C

V

EB

=5V

I

EBO

µ

A

V

BE

V

CE(sat)

1.2

620

V

mV

I

C

=500mA, V

CE

=1V*

I

C

=500mA, I

B

=50mA*

I

C

=10

0

mA, V

CE

=1V

I

C

=300mA, V

CE

=1V*

I

C

=500mA, V

CE

=1V*

h

FE

100

70

40

200

600

Transition Frequency

f

T

MHz

I

C

=10mA, V

CE

=5V

f =35MHz

V

CB

=10V, f =1MHz

Output Capacitance

C

obo

5.0

pF

*Measured under pulsed conditions.

TBA

BCX19TC Related Products

	BCX19TC	BCX19TA
Description	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Is it Rohs certified?	conform to	conform to
package instruction	SOT-23, 3 PIN	SOT-23, 3 PIN
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	45 V	45 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
Guideline	CECC50002-236	CECC50002-236
surface mount	YES	YES
Terminal surface	MATTE TIN	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz
VCEsat-Max	0.62 V	0.62 V

Recommended Resources

Three-phase four-wire circuit single-phase energy meter is directly connected to the circuit

Common transmitter circuit

Using LM2579 to form a boost regulator circuit diagram

Voice filter circuit using LM387

High voltage and high current operational amplifier circuit 3583

Crystal parallel resonant oscillator composed of gate circuit

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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