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SML50J44R3

Description
44A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size23KB,2 Pages
ManufacturerSEMELAB
Environmental Compliance  
Download Datasheet Parametric Compare View All

SML50J44R3 Overview

44A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET

SML50J44R3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-PUFM-X4
Reach Compliance Codecompliant
Avalanche Energy Efficiency Rating (Eas)2500 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)44 A
Maximum drain-source on-resistance0.1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PUFM-X4
JESD-609 codee3
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)176 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
SML50J44
SOT–227 Package Outline.
Dimensions in mm (inches)
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
W = 4 .1 (0 .1 6 1 )
4 .3 (0 .1 6 9 )
H=
4 .8 (0 .1 8 7 )
4 .9 (0 .1 9 3 )
(4 places)
1 2 .6 (0 .4 9 6 )
1 2 .8 (0 .5 0 4 )
2 5 .2 (0 .9 9 2 )
2 5 .4 (1 .0 0 0 )
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
Hex Nut M 4
(4 places)
1
R
2
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
4
3.3 (0 .1 2 9)
3.6 (0.14 3 )
1 4 .9 (0.58 7 )
1 5 .1 (0.59 4 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
3 8 .0 (1.4 9 6 )
3 8 .2 (1.5 0 4 )
3
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
R =
4 .0 (0 .1 57 )
(2 P lac e s)
S
D
V
DSS
500V
44A
I
D(cont)
R
DS(on)
0.100Ω
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular SOT–227 Package
S
G
* Source terminals are shorted
internally. Current handling
capability is equal for
either Source terminal.
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
500
44
176
±30
±40
450
3.6
–55 to 150
300
44
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 2.58mH, R
G
= 25Ω, Peak I
L
= 44A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
5/99

SML50J44R3 Related Products

SML50J44R3
Description 44A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET
Is it lead-free? Lead free
Is it Rohs certified? conform to
package instruction FLANGE MOUNT, R-PUFM-X4
Reach Compliance Code compliant
Avalanche Energy Efficiency Rating (Eas) 2500 mJ
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 500 V
Maximum drain current (ID) 44 A
Maximum drain-source on-resistance 0.1 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PUFM-X4
JESD-609 code e3
Number of components 1
Number of terminals 4
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 176 A
Certification status Not Qualified
surface mount NO
Terminal surface TIN
Terminal form UNSPECIFIED
Terminal location UPPER
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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