SEMICONDUCTORS
BD909 – BD911
SILICON POWER TRANSISTORS
The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220
envelope. They are intended for use in power linear and switching applications.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
E
I
B
P
t
T
j
T
stg
Ratings
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature range
I
E
= 0
I
B
= 0
I
C
= 0
Value
BD909
80
80
BD911
100
100
Unit
V
V
V
A
A
A
W
°C
5
15
15
5
90
150
-65 to 150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
R
thJ-mb
Ratings
From junction to mounting base
Value
1.4
Unit
°C/W
25/09/2012
COMSET SEMICONDUCTORS
1|3
SEMICONDUCTORS
BD909 – BD911
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
25/09/2012
COMSET SEMICONDUCTORS
info@comsetsemi.com
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