BC378G4 datasheet, PDF - EEWORLD Datasheet

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BC378G4: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size211KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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BC378G4 Overview

Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN

BC378G4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	35
JEDEC-95 code	TO-206AA
JESD-30 code	O-MBCY-W3
JESD-609 code	e4
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	GOLD
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
Base Number Matches	1

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SILICON EPITAXIAL

NPN TRANSISTOR

BC378

•

Hermetic TO-18 Metal Package

Designed For General Purpose Amplifiers,

Driver Stages and Signal Processing Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated)

VCES

VCEO

VEBO

IC

IB

PD

TJ

Tstg

Collector – Emitter Voltage (

VEB = 0V

)

Collector – Emitter Voltage (I

B = 0

)

Emitter – Base Voltage (I

C = 0

)

Collector Current

Base Current

Total Power Dissipation at

Junction Temperature Range

Storage Temperature Range

30V

25V

6V

1.0A

0.2A

375mW

1.0W

175°C

-65 to +175°C

TA

≤

25°C

TC

≤

75°C

THERMAL PROPERTIES

Symbols

R

θJA

R

θJC

Parameters

Thermal Resistance, Junction To Ambient

Thermal Resistance, Junction To Case

Min.

Typ.

Max.

400

100

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 8890

Issue 1

Page 1 of 2

Website:

http://www.semelab-tt.com

BC378G4 Related Products

	BC378G4	BC378	BC378.MOD
Description	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, HERMETIC SEALED, METAL, TO-18, 3 PIN
Is it Rohs certified?	conform to	conform to	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	25 V	25 V	25 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	35	35	35
JEDEC-95 code	TO-206AA	TO-206AA	TO-206AA
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz
Base Number Matches	1	1	1

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