Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
PBYR2045CTF, PBYR2045CTX series
SYMBOL
QUICK REFERENCE DATA
V
R
= 40 V/ 45 V
I
O(AV)
= 20 A
V
F
≤
0.57V
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2045CTF series is supplied in the SOT186 package.
The PBYR2045CTX series is supplied in the SOT186A package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1 (a)
cathode (k)
anode 2 (a)
isolated
SOT186
case
SOT186A
case
1 2 3
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
PBYR20
PBYR20
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
-
-
T
hs
≤
84 ˚C
square wave;
δ
= 0.5;
T
hs
≤
78 ˚C
square wave;
δ
= 0.5;
T
hs
≤
78 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
MAX.
40CTF
40CTX
40
40
40
20
20
100
110
1
150
175
45CTF
45CTX
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
October 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CTF, PBYR2045CTX series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
all terminals to external
heatsink
CONDITIONS
SOT186 package; R.H.
≤
65%; clean and
dustfree
MIN.
-
TYP. MAX. UNIT
-
1500
V
V
isol
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H.
≤
65%; clean
heatsink
and dustfree
Capacitance from pin 2 to
external heatsink
f = 1 MHz
-
-
2500
V
C
isol
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-hs
R
th j-a
Thermal resistance junction
to heatsink
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
(with heatsink compound)
in free air
MIN.
-
-
-
TYP. MAX. UNIT
-
-
55
6
5
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage
Reverse current
Junction capacitance
CONDITIONS
I
F
= 10 A; T
j
= 125˚C
I
F
= 20 A; T
j
= 125˚C
I
F
= 20 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.45
0.64
0.64
0.3
22
380
0.57
0.72
0.84
1.3
35
-
V
V
V
mA
mA
pF
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CTF, PBYR2045CTX series
10
8
Forward dissipation, PF (W)
Vo = 0.42 V
Rs = 0.015 Ohms
PBYR1045
Ths(max) (C)
D = 1.0
90
100
Reverse current, IR (mA)
125 C
PBYR2045CT
102
0.5
10
100 C
6
0.1
4
0.2
114
1
75 C
50 C
0.1
Tj = 25 C
126
I
t
p
t
p
D=
T
2
T
t
138
150
15
0
0.01
0
25
Reverse voltage, VR (V)
50
0
5
10
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
8
7
6
5
4
3
2
1
0
Forward dissipation, PF (W)
Vo = 0.42 V
Rs = 0.015 Ohms
PBYR1045
Ths(max) (C)
a = 1.57
102
108
114
120
126
132
138
144
Cd / pF
1000
PBYR2045CT
2.2
2.8
4
1.9
100
0
2
4
6
8
Average forward current, IF(AV) (A)
150
10
10
1
10
VR / V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
PBYR2045CT
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
50
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
10
Transient thermal impedance, Zth j-hs (K/W)
40
1
30
typ
20
max
10
T
0.1
P
D
t
p
D=
t
p
T
t
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYR2045ctx
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance per diode;
Z
th j-hs
= f(t
p
).
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
PBYR2045CTF, PBYR2045CTX series
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
0.4
M
2
3
0.9
0.7
2.54
5.08
top view
1.3
0.55 max
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
3.2
3.0
PBYR2045CTF, PBYR2045CTX series
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
3
1.0 (2x)
0.6
2.54
0.5
2.5
1.3
0.9
0.7
5.08
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.300
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