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BR1006(W)

Description
Bridge Rectifier Diode, 10A, 600V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size82KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

BR1006(W) Overview

Bridge Rectifier Diode, 10A, 600V V(RRM),

BR1006(W) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ConfigurationBRIDGE, 4 ELEMENTS
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
Maximum non-repetitive peak forward current125 A
Number of components4
Maximum operating temperature125 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage600 V
surface mountNO
Base Number Matches1
BL
FEATURES
GALAXY ELECTRICAL
BR10005(W) - - - BR1010(W)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 10.0 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 125 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
Mounting: thru hole for # 6 screw Mounting
BR10
.520(13.21)
.480(12.19)
.150
.140
.770(19.558)
.730(18.542)
.042(1.07)
.038(0.97)
.750(19.1)MIN
.275± .025
(6.99± .64)
Polarity shown on side of case;
Positive lead by beveled corner.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BR
10005
(W)
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
output current
@T
A
=50
BR
1001
(W)
100
70
100
BR
1002
(W)
200
140
200
BR
1004
(W)
400
280
400
10.0
BR
1006
(W)
600
420
600
BR
1008
(W)
800
560
800
BR
1010
(W)
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at
5.0
A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
125.0
A
V
F
I
R
T
J
T
STG
1.1
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μ
A
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287046
BL
GALAXY ELECTRICAL
1.

BR1006(W) Related Products

BR1006(W) BR1008(W)
Description Bridge Rectifier Diode, 10A, 600V V(RRM), Bridge Rectifier Diode, 10A, 800V V(RRM),
Is it Rohs certified? conform to conform to
Reach Compliance Code unknown unknown
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V
Maximum non-repetitive peak forward current 125 A 125 A
Number of components 4 4
Maximum operating temperature 125 °C 125 °C
Maximum output current 10 A 10 A
Maximum repetitive peak reverse voltage 600 V 800 V
surface mount NO NO

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