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UF2003

Description
Rectifier Diode, 1 Element, 2A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size72KB,2 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

UF2003 Overview

Rectifier Diode, 1 Element, 2A, 200V V(RRM),

UF2003 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
Maximum non-repetitive peak forward current60 A
Number of components1
Maximum operating temperature125 °C
Maximum output current2 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountNO
Base Number Matches1
BL
FEATURES
Low cost
GALAXY ELECTRICAL
UF2001 --- UF2007
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
2.0
A
ULTRA FAST RECTIFIER
DO -
15
Diffusde junction
Ultra fast switching for high efficiency
Low reverse leakage current
Low forward voltage drop
High current capability
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Polarity: Color band denotes cathode
Weight: 0.015 ounces,0.4 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF2001 UF2002 UF2003 UF2004 UF2005 UF2006 UF2007 UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
9.5mm lead length,
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J
=125
@T
A
=75
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
2.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
I
FSM
60.0
A
Maximum instantaneous forward voltage
@
2.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.0
1.3
1.70
V
A
5.0
100.0
50
50
25
- 55 ----- +
125
- 55 ----- + 150
75
30
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal resistance junction to ambient
www.galaxycn.com
Document Number 0264031
BL
GALAXY ELECTRICAL
1.

UF2003 Related Products

UF2003 UF2001 UF2002
Description Rectifier Diode, 1 Element, 2A, 200V V(RRM), Rectifier Diode, 1 Element, 2A, 50V V(RRM), Rectifier Diode, 1 Element, 2A, 100V V(RRM),
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code unknown unknown unknown
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
Maximum non-repetitive peak forward current 60 A 60 A 60 A
Number of components 1 1 1
Maximum operating temperature 125 °C 125 °C 125 °C
Maximum output current 2 A 2 A 2 A
Maximum repetitive peak reverse voltage 200 V 50 V 100 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs
surface mount NO NO NO
Base Number Matches 1 1 1
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