BAP70-05
Silicon PIN diode
Rev. 01 — 5 April 2004
Product data sheet
1. Product profile
1.1 General description
Two planar PIN diodes in common cathode configuration in a SOT23 small SMD plastic
package.
1.2 Features
s
High voltage; current controlled
s
Low diode capacitance
s
Low series inductance.
1.3 Applications
s
RF attenuators and switches.
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
Description
anode (a1)
anode (a2)
common cathode
3
Simplified outline
Symbol
3
2
1
1
Top view
2
sym027
3. Ordering information
Table 2:
Ordering information
Package
Name
BAP70-05
-
Description
plastic surface mounted package; 3 leads
Version
SOT23
Type number
Philips Semiconductors
BAP70-05
Silicon PIN diode
4. Marking
Table 3:
BAP70-05
Marking
Marking code
8Kp
Type number
5. Limiting values
Table 4:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
-
-
-
−65
−65
50
100
250
+150
+150
V
mA
mW
°C
°C
Parameter
Conditions
Min
Max
Unit
6. Thermal characteristics
Table 5:
Symbol
R
th(j-s)
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
220
Unit
K/W
7. Characteristics
Table 6:
Electrical characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
I
F
= 50 mA
V
R
= 50 V
f = 1 MHz; see
Figure 1
V
R
= 0 V
V
R
= 1 V
V
R
= 20 V
-
-
-
600
430
250
-
-
300
fF
fF
fF
-
-
0.95
-
1.1
20
V
nA
Parameter
Conditions
Min
Typ
Max
Unit
9397 750 12811
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 5 April 2004
2 of 7
Philips Semiconductors
BAP70-05
Silicon PIN diode
Table 6:
Electrical characteristics
…continued
T
j
= 25
°
C unless otherwise specified.
Symbol
r
D
Parameter
diode forward resistance
Conditions
f = 100 MHz; see
Figure 2
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
τ
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
Ω;
measured
at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
-
-
-
-
-
77
40
5.4
1.4
1.25
100
50
7
1.9
-
Ω
Ω
Ω
Ω
µs
Min
Typ
Max
Unit
L
S
series inductance
-
1.4
-
nH
600
C
d
(fF)
400
001aaa519
10
2
r
D
(Ω)
10
mcd769
200
1
0
0
5
10
15
V
R
(V)
20
10
−1
10
−1
1
10
IF (mA)
10
2
f = 1 MHz; T
j
= 25
°C.
f = 100 MHz; T
j
= 25
°C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values.
Fig 2. Diode forward resistance as a function of
forward current; typical values.
9397 750 12811
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 5 April 2004
3 of 7
Philips Semiconductors
BAP70-05
Silicon PIN diode
8. Package outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Fig 3. Package outline.
9397 750 12811
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 5 April 2004
4 of 7
Philips Semiconductors
BAP70-05
Silicon PIN diode
9. Revision history
Table 7:
Revision history
Release date Data sheet status
20040405
Product data
Change notice
-
Order number
Supersedes
9397 750 12811 -
Document ID
BAP70-05_1
9397 750 12811
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 5 April 2004
5 of 7
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