BD899D1 datasheet, PDF - EEWORLD Datasheet

BD899D1: Description8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB; CategoryDiscrete semiconductor The transistor; File Size157KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BD899D1 Overview

8A, 80V, NPN, Si, POWER TRANSISTOR, TO-220AB

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	8 A
Collector-emitter maximum voltage	80 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	70 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	1 MHz
Base Number Matches	1

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