BC618RLRM datasheet, PDF - EEWORLD Datasheet

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BC618RLRM: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size150KB，5 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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BC618RLRM Overview

Small Signal Bipolar Transistor, 1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

BC618RLRM Parametric

Parameter Name	Attribute value
package instruction	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	7 pF
Collector-emitter maximum voltage	55 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	4000
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Maximum power consumption environment	1.5 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz
VCEsat-Max	1.1 V
Base Number Matches	1

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	BC618RLRM	BC618RLRA	BC618RL	BC618ZL1	BC618RLRB	BC618RL1	BC618RLRE	BC618RLRP	BC618RLRF
Description	Small Signal Bipolar Transistor, 1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	1000mA, 55V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	1000mA, 55V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	1000mA, 55V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92	Small Signal Bipolar Transistor, 1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 1A I(C), 55V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
Collector-based maximum capacity	7 pF	7 pF	7 pF	7 pF	7 pF	7 pF	7 pF	7 pF	7 pF
Collector-emitter maximum voltage	55 V	55 V	55 V	55 V	55 V	55 V	55 V	55 V	55 V
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	4000	4000	4000	4000	4000	4000	4000	4000	4000
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power consumption environment	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
VCEsat-Max	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V	1.1 V
Maker	-	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )

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