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L2SC1623QLT1

Description
Small Signal Bipolar Transistor, 0.15A I(C), NPN
CategoryDiscrete semiconductor    The transistor   
File Size192KB,5 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

L2SC1623QLT1 Overview

Small Signal Bipolar Transistor, 0.15A I(C), NPN

L2SC1623QLT1 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.15 A
ConfigurationSingle
Minimum DC current gain (hFE)120
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
FEATURE
High Voltage: V
CEO
= 50 V.
Epitaxial planar type.
PNP complement: L2SA812
Pb-Free Package is available.
L2SC1623*LT1
3
DEVICE MARKING AND ORDERING INFORMATION
Device
L2SC1623QLT1
L2SC1623QLT1G
L2SC1623RLT1
L2SC1623RLT1G
L2SC1623SLT1
L2SC1623SLT1G
Marking
L5
L5
(Pb-Free)
L6
L6
(Pb-Free)
L7
L7
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
3000/Tape&Reel
1
2
SOT– 23
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
50
60
7
150
Unit
V
V
V
mAdc
THERMAL CHARATEERISTICS
Characteristic
Total Device Dissipation FR-5 Board, (1)
T
A
=25 C
Derate above 25
C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA=25
o
C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
Tj ,Tstg
o
Symbol
P
D
Max
Unit
o
225
o
mW
mW/
o
C
o
1.8
R
θJA
556
C
/
W
P
D
300
2.4
417
-55 to +150
o
mW
mW/
o
C
C
/
W
o
C
L2SC1623-1/5
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