FF50R06KL2 datasheet, PDF - EEWORLD Datasheet

FF50R06KL2: DescriptionInsulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,; CategoryDiscrete semiconductor The transistor; File Size98KB，2 Pages; ManufacturerEUPEC [eupec GmbH]

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FF50R06KL2 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel,

Parameter Name	Attribute value
Reach Compliance Code	unknown
Maximum collector current (IC)	50 A
Collector-emitter maximum voltage	600 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage	20 V
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	250 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
VCEsat-Max	2.5 V
Base Number Matches	1

This Material Copyrighted By Its Respective Manufacturer

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