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BZT55C9V1

Description
Zener Diode, 9.1V V(Z), 6.1%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2
CategoryDiscrete semiconductor    diode   
File Size79KB,6 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
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BZT55C9V1 Overview

Zener Diode, 9.1V V(Z), 6.1%, 0.5W, Silicon, Unidirectional, GLASS, SIMILAR TO DO-213AA, QUADROMELF-2

BZT55C9V1 Parametric

Parameter NameAttribute value
package instructionO-LELF-N2
Reach Compliance Codeunknown
Other featuresLOW NOISE, VERY HIGH STABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-N2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage9.1 V
surface mountYES
technologyZENER
Terminal formNO LEAD
Terminal locationEND
Maximum voltage tolerance6.1%
Working test current5 mA
Base Number Matches1
TELEFUNKEN Semiconductors
BZT55C...
Silicon Epitaxial Planar Z–Diodes
Features
D
Very sharp reverse characteristic
D
Low reverse current level
D
Very high stability
D
Low noise
D
Available with tighter tolerances
Applications
Voltage stabilization
94 9373
Absolute Maximum Ratings
T
j
= 25_C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
x300K/W
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°C
°C
Maximum Thermal Resistance
T
j
= 25_C
Parameter
Junction ambient
Test Conditions
on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Characteristics
T
j
= 25_C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Rev. A1: 12.12.1994
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