LPA6836V
M
EDIUM
P
OWER
PHEMT
WITH
S
OURCE
V
IAS
•
FEATURES
♦
25 dBm Output Power at 1-dB
Compression at 18 GHz
♦
9.5 dB Power Gain at 18 GHz
♦
55% Power-Added Efficiency
♦
Source Vias to Backside Metallization
DRAIN
BOND
PAD
GATE
BOND
PAD
•
DESCRIPTION AND APPLICATIONS
DIE SIZE: 15.4X14.2 mils (390x360
µm)
DIE THICKNESS: 3.9 mils (100
µm)
BONDING PADS: 3.0X3.0 mils (75x75
µm)
The LPA6836V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam direct-
write 0.25
µm
by 360
µm
Schottky barrier gate. The recessed “mushroom” gate structure minimizes
parasitic gate-source and gate resistances. The epitaxial structure and processing have been
optimized for high dynamic range.
Typical applications include high dynamic range driver stages for commercial applications including
wireless infrastructure systems, broad bandwidth amplifiers, and optical systems.
Source vias have been added for improved performance and assembly convenience. Each via hole
has 0.02 nH of inductance. Additionally, the via holes remove the need for source bond wires,
meaning only two bond wires are required for assembly. Because the via connects the source pad to
the backside metallization, self-bias configurations should be designed with caution.
•
ELECTRICAL SPECIFICATIONS @ T
Ambient
= 25°C
Parameter
Saturated Drain-Source Current
Power at 1-dB Compression
Power Gain at 1-dB Compression
Power-Added Efficiency
Maximum Drain-Source Current
Transconductance
Gate-Source Leakage Current
Pinch-Off Voltage
Gate-Source Breakdown
Voltage Magnitude
Gate-Drain Breakdown
Voltage Magnitude
Thermal Resistivity
frequency=18 GHz
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
2/22/02
Email:
sales@filss.com
Symbol
I
DSS
P-1dB
G-1dB
PAE
I
MAX
G
M
I
GSO
V
P
|V
BDGS
|
|V
BDGD
|
Θ
JC
Test Conditions
V
DS
= 2 V; V
GS
= 0 V
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 8 V; I
DS
= 50% I
DSS
V
DS
= 2 V; V
GS
= 1 V
V
DS
= 2 V; V
GS
= 0 V
V
GS
= -5 V
V
DS
= 2 V; I
DS
= 2 mA
I
GS
= 2 mA
I
GD
= 2 mA
Min
80
24
8.5
Typ
115
25
9.5
55
190
Max
125
Units
mA
dBm
dB
%
mA
mS
75
-0.25
11
12
100
1
-1.2
15
16
100
10
-2.0
µA
V
V
V
°C/W
LPA6836V
M
EDIUM
P
OWER
PHEMT
WITH
S
OURCE
V
IAS
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Gate Current
RF Input Power
Channel Operating Temperature
Storage Temperature
Total Power Dissipation
Symbol
V
DS
V
GS
I
DS
I
G
P
IN
T
CH
T
STG
P
TOT
Test Conditions
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
T
Ambient
= 22
±
3
°C
—
T
Ambient
= 22
±
3
°C
-65
Min
Max
10
-4
2xI
DSS
18
180
175
175
1.4
Units
V
V
mA
mA
mW
ºC
ºC
W
Notes:
•
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
•
Power Dissipation defined as: P
TOT
≡
(P
DC
+ P
IN
) – P
OUT
, where
P
DC
: DC Bias Power
P
IN
: RF Input Power
P
OUT
: RF Output Power
•
Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
P
TOT
= 1.4W – (0.0093W/°C) x T
HS
where T
HS
= heatsink or ambient temperature.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage
temperature should be 280-290°C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm)
gold wire. Stage temperature should be 250-260°C.
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
•
•
Phone:
(408) 988-1845
Fax:
(408) 970-9950
http://
www.filss.com
Revised:
2/22/02
Email:
sales@filss.com
Microchip MCU
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