2015-12-23
Silicon PIN Photodiode
Version 1.3
BPX 61
Features:
•
Suitable up to 125 °C
•
Especially suitable for applications from 400 nm to 1100 nm
•
Short switching time (typ. 20 ns)
•
Hermetically sealed metal package (similar to TO-5)
Applications
Industrial electronics
•
•
For control and drive circuits
•
Photointerrupters
•
IR remote control of hi-fi and TV sets, dimmers, remote controls of various equipment
Ordering Information
Type:
Photocurrent
I
P
[µA]
E
v
= 1000 lx, Std. Light A, V
R
=5V
BPX 61
70 (≥ 50)
Q62705P0025
Ordering Code
2015-12-23
1
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operating and storage temperature range
Reverse voltage
Total Power dissipation
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics
(T
A
= 25 °C)
Parameter
Spectral sensitivity
(V
R
= 5 V)
Photocurrent
(E
v
= 1000 lx, Std. Light A, V
R
= 5 V)
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of radiant sensitive area
Half angle
Dark current
(V
R
= 10 V)
Spectral sensitivity of the chip
(λ = 850 nm)
Quantum yield of the chip
(λ = 850 nm)
Open-circuit voltage
(E
v
= 1000 lx, Std. Light A)
Short-circuit current
(E
v
= 1000 lx, Std. Light A)
Rise and fall time
(V
R
= 5 V, R
L
= 50 Ω, λ = 850 nm, I
P
= 800 µA)
Forward voltage
(I
F
= 100 mA, E = 0)
Capacitance
(V
R
= 0 V, f = 1 MHz, E = 0)
Temperature coefficient of V
O
(typ)
(typ (min))
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
S
I
P
λ
S max
λ
10%
A
LxW
ϕ
Values
70 (≥ 50)
70 (≥ 50)
850
(typ) 400
... 1100
7.02
2.65 x 2.65
± 55
2 (≤ 30)
0.62
0.90
Symbol
T
op
; T
stg
V
R
P
tot
V
ESD
Values
-40 ... 125
32
250
2000
BPX 61
Unit
°C
V
mW
V
Unit
nA/Ix
µA
nm
nm
mm
2
mm x
mm
°
nA
A/W
Electro
ns
/Photon
mV
µA
µs
V
pF
mV / K
(typ (max)) I
R
(typ)
(typ)
S
λ typ
η
(typ (min))
(typ)
(typ)
(typ)
(typ)
(typ)
V
O
I
SC
t
r
, t
f
V
F
C
0
TC
V
375 (≥ 320)
70
0.02
1.3
72
-2.6
2015-12-23
2
Version 1.3
BPX 61
Parameter
Temperature coefficient of I
SC
(Std. Light A)
Noise equivalent power
(V
R
= 10 V, λ = 850 nm)
Detection limit
(typ)
(typ)
(typ)
Symbol
TC
I
NEP
D
*
Values
0.18
0.041
6.5e12
Unit
%/K
pW /
Hz
½
cm x
Hz
½
/ W
Relative Spectral Sensitivity
1)
page 7
S
rel
= f(λ)
100
S
rel
%
80
OHF00078
Photocurrent / Open-Circuit Voltage
1)
page 7
I
P
(V
R
= 5 V) / V
O
= f(E
V
)
60
40
20
0
400 500 600 700 800 900 nm 1100
λ
2015-12-23
3
Version 1.3
Dark Current
1)
page 7
I
R
= f(V
R
), E = 0
4000
BPX 61
Power Consumption
P
tot
= f(T
A
)
OHF00080
Ι
R
pA
3000
2000
1000
0
0
5
10
15
V
V
R
20
Capacitance
1)
page 7
C = f(V
R
), f = 1 MHz, E = 0
100
C
pF
80
OHF00081
Dark Current
1)
page 7
I
R
= f(T
A
), V
R
= 10 V, E = 0
10
3
OHF00082
Ι
R
nA
10
2
70
60
50
40
30
20
10
0
-2
10
10
-1
10
0
10
1
V 10
2
V
R
10
-1
0
20
40
60
80 ˚C 100
T
A
10
0
10
1
2015-12-23
4
Version 1.3
Directional Characteristics
1)
page 7
S
rel
= f(ϕ)
BPX 61
Package Outline
Chip position
ø9.5 (0.374)
ø9.0 (0.354)
ø8.3 (0.327)
ø8.0 (0.315)
ø6.0 (0.236)
1.55 (0.061)
ø0.45 (0.018)
Cathode
Radiant
sensitive area
5.08 (0.200)
spacing
0.6
0.8
5(
5(
0.0
0.0
)
3.4 (0.134)
3.0 (0.118)
14.5 (0.571)
12.5 (0.492)
26
33
)
9)
03 )
.
(0 031
1.0 (0.
0.8
GMOY6011
0.3 (0.012) max
Approx. weight 2 g
Dimensions in mm (inch).
Package
Metal Can (TO-39), hermetically sealed
2015-12-23
5
ø5.8 (0.228)
1.75 (0.069)
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