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MRF880

Description
RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size117KB,1 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MRF880 Overview

RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN

MRF880 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionEMITTER
Maximum collector current (IC)15 A
Collector-emitter maximum voltage28 V
ConfigurationCOMMON EMITTER, 2 ELEMENTS
Minimum DC current gain (hFE)30
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-CDFM-F4
Number of components2
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment140 W
Minimum power gain (Gp)8.5 dB
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1

MRF880 Related Products

MRF880 TP3008
Description RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
Reach Compliance Code unknown unknown
Maximum collector current (IC) 15 A 1 A
Configuration COMMON EMITTER, 2 ELEMENTS SINGLE
Minimum DC current gain (hFE) 30 15
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-CDFM-F4 R-CDFM-F6
Number of components 2 1
Number of terminals 4 6
Maximum operating temperature 200 °C 200 °C
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 140 W 35 W
Minimum power gain (Gp) 8.5 dB 11.5 dB
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form FLAT FLAT
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
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