BUX80
MECHANICAL DATA
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
1.52 (0.06)
3.43 (0.135)
6.35 (0.25)
9.15 (0.36)
HIGH CURRENT
HIGH SPEED
HIGH POWER
SILICON NPN PLANAR
TRANSISTOR
38.61 (1.52)
39.12 (1.54)
0.97 (0.060)
1.10 (0.043)
22.23
(0.875)
max.
7.92 (0.312)
12.70 (0.50)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
1
2
Applications
The BUX80 is an epitaxial silicon NPN planar transistor that
has high current and high power handling capability and
high switching speed.
This device is especially suitable for switching–control
amplifiers, power gates, switching regulators, power-switch-
ing circuits converters, inverters and control circuits.
3
(case)
3.84 (0.151)
4.09 (0.161)
TO–204AA (TO–3)
PIN 1 — Base
PIN 2 — Emitter
Case is Collector.
ABSOLUTE MAXIMUM RATINGS
(T
j
= 25°C unless otherwise stated)
V
CES
V
CER
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
STG
T
J
Collector – Emitter Voltage
Collector – Emitter Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation T
case
= 40°C
Storage Temperature Range
Maximum Junction Temperature
V
BE
= 0
R
BE
= 50Ω
I
B
= 0
I
C
= 0
800V
500V
400V
10V
10A
15A
5A
100W
-65 to +150°C
+150°C
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6049
Issue 1
BUX80
ELECTRICAL CHARACTERISTICS
(Tj = 25°C unless otherwise stated)
Parameter
V
CEO(BR)
V
CER(BR)
V
CE(sat)
V
BE(sat)*
I
EBO
h
FE
t
on
t
s
t
f
Collector - Emitter Breakdown
Voltage
Collector - Emitter Breakdown
Voltage
Collector – Emitter
Saturation Voltage
Base – Emitter
Saturation Voltage
Emitter Cut-off Current
DC Current Gain
Turn–On Time
Storage Time
Fall Time
Test Conditions
I
C
= 100mA
I
C
= 100mA
I
C
= 5A
I
C
= 8A
I
C
= 5A
I
C
= 8A
I
C
= 0
I
C
= 1.2A
I
C
= 5A
I
B1
=1A
I
C
= 5A
I
B1
=1A
I
B
= 0
R
BE
= 50Ω
I
B
= 1A
I
B
= 2.5A
I
B
= 1A
I
B
= 2.5A
V
BE
= 10V
V
CE
= 5V
V
CC
= 250V
I
B2
= -2A
V
CC
=-250V
I
B2
= -2A
Min.
400
500
Typ.
Max. Unit
V
V
1.5
3
1.4
1.8
10
mA
—
0.5
3.5
0.5
µs
µs
V
30
THERMAL CHARACTERISTICS
R
th j-mb
Thermal Resistance Junction to Case
1.1
°C/W
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 6049
Issue 1
Microcontroller MCU
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