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JANTXV1N962CUR-1

Description
Zener Diode, 11V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA
CategoryDiscrete semiconductor    diode   
File Size209KB,28 Pages
ManufacturerCompensated Devices Inc.
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JANTXV1N962CUR-1 Overview

Zener Diode, 11V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA, DO-213AA

JANTXV1N962CUR-1 Parametric

Parameter NameAttribute value
package instructionDO-213AA
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED, HIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
Humidity sensitivity levelNOT SPECIFIED
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage11 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance2%
Working test current11.5 mA
Base Number Matches1
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 6 January 2006.
INCH-POUND
MIL-PRF-19500/117N
6 October 2005
SUPERSEDING
MIL-PRF-19500/117M
13 January 2004
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N962B-1 THROUGH 1N992B-1, AND 1N962BUR-1 THROUGH 1N992BUR-1, 1N962C-1 THROUGH
1N992C-1, AND 1N962CUR-1 THROUGH 1N992CUR-1, AND 1N962D-1 THROUGH 1N992D-1, 1N962DUR-1
THROUGH 1N992DUR-1, JAN, JANTX, JANTXV, AND JANHC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided
for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for
each unencapsulated device type.
1.2 Physical dimensions. See figure 1 (similar to DO-35), figure 2 ( DO-213AA), and figure 3 for (JANHC die).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.8) herein and
as follows:
a. P
TL
= 500 mW, (DO-35) at T
L
= +50°C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink
at L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175°C.
b. P
TEC
= 500 mW, (DO-213AA) at T
EC
= +125°C, derate to 0 at +175°C. -65°C
T
J
+175°C; -65°C
T
STG
+175°C.
c. P
T(PCB)
= 500 mW, T
A
= 75°C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://assist.daps.dla.mil.
AMSC N/A
FSC 5961
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