BSW68-JQR-B datasheet, PDF - EEWORLD Datasheet

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BSW68-JQR-B: DescriptionSmall Signal Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size111KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BSW68-JQR-B Overview

Small Signal Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN

BSW68-JQR-B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1.5 A
Collector-emitter maximum voltage	150 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	80 MHz
Base Number Matches	1

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SILICON PLANAR EPITAXIAL

NPN TRANSISTOR

BSW68

•

Hermetic TO-39 Metal package.

Ideally suited for Switching

and General Purpose Applications

Screening Options Available

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

IC

ICM

PD

TJ

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Peak Collector Current

TA = 25°C

Total Power Dissipation at

Derate Above 25°C

TC = 25°C

Total Power Dissipation at

Derate Above 25°C

Junction Temperature Range

Storage Temperature Range

150V

6V

1.0A

2A

0.795W

4.5mW/°C

5W

28.6mW/°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

R

θJA

R

θJC

Parameters

Thermal Resistance, Junction To Ambient

Thermal Resistance, Junction To Case

Max.

220

35

Units

°C/W

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 6056

Issue 3

Page 1 of 3

Website:

http://www.semelab-tt.com

BSW68-JQR-B Related Products

	BSW68-JQR-B	BSW68	BSW68E1
Description	Small Signal Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN	Small Signal Bipolar Transistor, 1.5A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, HERMETIC SEALED, TO-39, 3 PIN
Is it Rohs certified?	incompatible	incompatible	conform to
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	1.5 A	1.5 A	1.5 A
Collector-emitter maximum voltage	150 V	150 V	150 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	15
JEDEC-95 code	TO-205AD	TO-205AD	TO-205AD
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Maximum operating temperature	200 °C	200 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	80 MHz	80 MHz	80 MHz
Maker	-	TT Electronics plc	TT Electronics plc

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