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BZT03C51

Description
Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon,
CategoryDiscrete semiconductor    diode   
File Size75KB,6 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
Download Datasheet Parametric View All

BZT03C51 Overview

Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon,

BZT03C51 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum clamping voltage70.8 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.3 W
Certification statusNot Qualified
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
BZT03C...
Silicon Z–Diodes and Transient Voltage Suppressors
Features
D
Glass passivated junction
D
Hermetically sealed package
D
Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
94 9539
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Test Conditions
l=10mm,
T
L
=25
°
C
T
amb
=25
°
C
Type
Symbol
P
V
P
V
P
ZRM
t
p
=100
m
s,
T
j
=25
°
C
P
ZSM
T
j
T
stg
Value
3.25
1.3
10
600
175
–65...+175
Unit
W
W
W
W
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Junction ambient
Test Conditions
l=10mm, T
L
=constant
on PC board with spacing 25mm
Symbol
R
thJA
R
thJA
Value
46
100
Unit
K/W
K/W
Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=0.5A
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
TELEFUNKEN Semiconductors
Rev. A1, 12-Dec-94
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