Medium Power NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 60V; IC (A): 10A; HFE Min: 20; HFE Max: 100; VCE (V): 4V; IC (mA): 4000mA; VCE(SAT) (V): 8V; IC (mA)1: 10000mA; IB (mA): 3300mA; FT Min (MHz): 2 MHz; PTM Max (W): 2W; Package: TO-220AB; package_code: TO-220AB; mfr_package_code: TO-220AB
| Parameter Name | Attribute value |
| Parts packaging code | TO-220AB |
| package instruction | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 10 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 5 |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Polarity/channel type | NPN |
| surface mount | NO |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 2 MHz |
| Base Number Matches | 1 |
